Infineon TechnologiesGermany
TRENCH <= 40V
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current44 ~ 211 A
On-resistance820 µΩMax · 50A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta), 211A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 63W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | DirectFET™ Isometric ME |
| Supplier Device Package | MG-WDSON-8-904 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 20 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 0.82mOhm @ 50A, 10V |
| Series | OptiMOS™5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |