All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current478 A
On-resistance800 µΩMax · 100A
Gate threshold voltage2.4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C478A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)375W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device PackageD2PAK (7-Lead)
Other
Base Product NumberIRL40SC209
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs267 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds15270 pF @ 25 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs0.8mOhm @ 100A, 10V
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 250µA

Documents