MOSFET N-CH 60V 195A TO262-3
沟道N 沟道
耐压60 V
连续漏极电流195 A
导通电阻1.95 mΩ
全部替代型号
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沟道N 沟道
耐压60 V
连续漏极电流195 A
导通电阻1.95 mΩ最大 · 100A
阈值电压2.4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262-3 |
| 其他 | |
| Base Product Number | IRL60SL216 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15330 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 100A, 10V |
| Series | HEXFET®, StrongIRFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |