Infineon TechnologiesGermany
MOSFET N-CH 30V 3.9A SOT223
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current3.9 A
On-resistance45 mΩMax · 3.9A
Gate threshold voltage2.4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Documents
DatasheetDatasheet · 147.0 KB · 2026-09-21Catalog & SelectionCatalog & Selection · 1.7 MB · 2026-09-22Catalog & SelectionCatalog & Selection · 1.5 MB · 2026-09-22Application NoteApplication Note · 700.7 KB · 2026-09-22MarketingMarketing · 616.4 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 200.4 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 103.1 KB · 2026-09-22OtherOther · 368.8 KB · 2026-09-21
Open document center