Infineon TechnologiesGermany
MOSFET N-CH 55V 3.8A SOT223
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
Continuous drain current3.8 A
On-resistance40 mΩMax · 3.8A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drain to Source Voltage (Vdss) | 55 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |