onsemiUnited States

IRLM220ATF

ObsoleteSingle FETs, MOSFETsSOT-223-4

MOSFET N-CH 200V 1.13A SOT223-4

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current1.13 A
On-resistance800 mΩMax · 570mA
Power
Current - Continuous Drain (Id) @ 25°C1.13A (Ta)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)5V
Power Dissipation (Max)2W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4
Other
Base Product NumberIRLM220
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs800mOhm @ 570mA, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id-

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