MOSFET N-CH 20V 6.5A MICRO6
沟道N 沟道
耐压20 V
连续漏极电流6.5 A
导通电阻30 mΩ
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沟道N 沟道
耐压20 V
连续漏极电流6.5 A
导通电阻30 mΩ最大 · 6.5A
阈值电压1.2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 2W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | SOT-23-6 |
| Supplier Device Package | Micro6™(SOT23-6) |
| 其他 | |
| Base Product Number | IRLMS200 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1310 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |