MOSFET P-CH 20V 2.4A 6-TSOP
沟道P 沟道
耐压20 V
连续漏极电流2.4 A
导通电阻200 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流2.4 A
导通电阻200 mΩ最大 · 1.6A
阈值电压700 mV最大 · 250μA (Min)
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| Supplier Device Package | Micro6™(SOT23-6) |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.6A, 4.5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |