MOSFET N-CH 25V 57A DPAK
沟道N 沟道
耐压25 V
连续漏极电流57 A
导通电阻8.7 mΩ
全部替代型号
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沟道N 沟道
耐压25 V
连续漏极电流57 A
导通电阻8.7 mΩ最大 · 21A
阈值电压2.35 V最大 · 25μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 48W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | - |
| Supplier Device Package | TO-252AA (DPAK) |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 13 V |
| Mfr | Infineon Technologies |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 21A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |