Infineon TechnologiesGermany
MOSFET N-CH 55V 42A IPAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
Continuous drain current42 A
On-resistance27 mΩMax · 25A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-PAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 25A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |