IRLU3110ZPBF

Not For New DesignsSingle FETs, MOSFETsTO-251-3 Short Leads

MOSFET N-CH 100V 42A IPAK

All alternatives

ChannelN-channel

Drain-source voltage100 V

Continuous drain current42 A

On-resistance14 mΩMax · 38A

Gate threshold voltage2.5 VMax · 100μA

Power
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Power Dissipation (Max)	140W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	IPAK (TO-251AA)
Other
Base Product Number	IRLU3110
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 25 V
Mfr	Infineon Technologies
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	14mOhm @ 38A, 10V
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.5V @ 100µA