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Technical parameters

Key specs

Memory typeFlash
Memory size512 Mbit
InterfaceSPI
Supply voltage2.3 ~ 3.6 V
Clock frequency133 MHzMax

Datasheet-verified parameters

24 items
ParameterValue and test conditionsSource
Memory TypeSerial Flash Memory
Capacity512Mb
InterfaceMulti I/O SPI & Quad I/O QPI DTR
Power Supply Voltage2.3V (VMIN) – 3.6V (VMAX); 3.0V (Typ)
Clock Frequency133MHz (STR), 66MHz (DTR)
Package24-ball TFBGA 6x8mm 5x5 ball array
Operating Temperature-40°C to 105°C (Extended Grade E)
GradeExtended Grade E
RoHS CompliantRoHS Compliant
Halogen-FreeHalogen-Free
Storage Temperature-65°C to +150°C
Absolute Maximum VCC-0.5V to +6.0V
Active Read CurrentTyp 13mA, Max 16mA (NORD)
Program CurrentTyp 30mA, Max 35mA (85°C)
Erase CurrentTyp 30mA, Max 35mA (85°C, SER/BER)
Standby CurrentTyp 21μA, Max 90μA (85°C)
Deep Power Down CurrentTyp 17μA, Max 35μA (85°C)
Input Low VoltageMin -0.5V, Max 0.3VCC
Input High VoltageMin 0.7VCC, Max VCC+0.3V
Output Low VoltageMax 0.2V (IOL=100μA)
Output High VoltageMin VCC-0.2V (IOH=-100μA)
Sector Size4Kbyte
Block Size32Kbyte / 64Kbyte
Data Throughput66.5Mbytes/s
All parameters (19)ExpandCollapse
Power
Voltage - Supply2.3V ~ 3.6V
AC and DC characteristics
Clock Frequency133 MHz
Environment and package
Memory Size512Mbit
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 105°C (TA)
PackageTray
Package / Case24-TBGA
Supplier Device Package24-TFBGA (6x8)
Other
Base Product NumberIS25LP512
DigiKey ProgrammableNot Verified
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O, QPI, DTR
Memory Organization64M x 8
Memory TypeNon-Volatile
MfrISSI, Integrated Silicon Solution Inc
Product StatusActive
Series-
TechnologyFLASH - NOR
Write Cycle Time - Word, Page1.6ms

Pinout and package

Top View, Balls Facing Down 24…
Top View, Balls Facing Down 24…
Package: 24-ball TFBGA 6x8mm 5x5 ball array

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.