1G, 1.8V, Mobile DDR, 64Mx16, 20
类型DRAM
容量1 Gbit
接口并口
供电电压1.7 ~ 1.95 V
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类型DRAM
容量1 Gbit
接口并口
供电电压1.7 ~ 1.95 V
时钟频率208 MHz最大
| 电源 | |
|---|---|
| Voltage - Supply | 1.7V ~ 1.95V |
| 交流 / 直流特性 | |
| Clock Frequency | 208 MHz |
| 环境与封装 | |
| Memory Size | 1Gbit |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package | Bulk |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-TFBGA (8x10) |
| 其他 | |
| Access Time | 5 ns |
| DigiKey Programmable | Not Verified |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 64M x 16 |
| Memory Type | Volatile |
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Product Status | Active |
| Series | - |
| Technology | SDRAM - Mobile LPDDR |
| Write Cycle Time - Word, Page | 14.4ns |