ISC011N06LM5ATMA1

在产单 FET,MOSFET

TRENCH 40<-<100V PG-TDSON-8

沟道N 沟道
耐压60 V
连续漏极电流37 ~ 288 A
导通电阻1.15 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流37 ~ 288 A
导通电阻1.15 mΩ最大 · 50A
阈值电压2.3 V最大 · 116μA
电源
Current - Continuous Drain (Id) @ 25°C37A (Ta), 288A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3W (Ta), 188W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePG-TDSON-8-17
其他
Base Product NumberISC011N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 30 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs1.15mOhm @ 50A, 10V
SeriesOptiMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.3V @ 116µA

技术资料