Infineon TechnologiesGermany
40V 2.8M OPTIMOS MOSFET SUPERSO8
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current24 ~ 121 A
On-resistance2.8 mΩMax · 50A
Gate threshold voltage3.4 VMax · 30μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 121A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Power Dissipation (Max) | 3W (Ta), 75W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 FL |
| Other | |
| Base Product Number | ISC028N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 20 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 50A, 10V |
| Series | OptiMOS™-5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 30µA |
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