Infineon TechnologiesGermany
OPTIMOS 6 POWER-TRANSISTOR,120V
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage120 V
Continuous drain current13.4 ~ 86 A
On-resistance7.3 mΩMax · 40A
Gate threshold voltage2.2 VMax · 50μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 86A (Tc) |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 |
| Other | |
| Base Product Number | ISC073 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 60 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 40A, 10V |
| Series | OptiMOS™ 6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 50µA |