IXYSUnited States
DISC IGBT BIMSFT-VERYHIVOLT I4-P
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 86 A |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 357 W |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Other | |
| Base Product Number | IXBF55 |
| Gate Charge | 335 nC |
| IGBT Type | - |
| Input Type | Standard |
| Mfr | IXYS |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.9 µs |
| Series | BIMOSFET™ |
| Switching Energy | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
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