IXYS美国

IXFB300N10P

在产单 FET,MOSFETTO-264-3

MOSFET N-CH 100V 300A PLUS264

沟道N 沟道
耐压100 V
连续漏极电流300 A
导通电阻5.5 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流300 A
导通电阻5.5 mΩ最大 · 50A
阈值电压5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1500W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackagePLUS264™
其他
Base Product NumberIXFB300
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds23000 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 8mA

技术资料