IXYSUnited States

IXFC13N50

MOSFET N-CH 500V 12A ISOPLUS220

All alternatives

ChannelN-channel

Drain-source voltage500 V

Continuous drain current12 A

On-resistance400 mΩMax · 6.5A

Gate threshold voltage4 VMax · 2.5mA

Power
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	140W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	ISOPLUS220™
Supplier Device Package	ISOPLUS220™
Other
Base Product Number	IXFC13N50
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 25 V
Mfr	IXYS
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	400mOhm @ 6.5A, 10V
Series	HiPerFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 2.5mA

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