IXYSUnited States
MOSFET N-CH 200V 60A ISOPLUS220
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current60 A
On-resistance33 mΩMax · 30A
Gate threshold voltage4 VMax · 4mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 230W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | ISOPLUS220™ |
| Supplier Device Package | ISOPLUS220™ |
| Other | |
| Base Product Number | IXFC60N20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 30A, 10V |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 4mA |