IXFC74N20P
IXYS美国

IXFC74N20P

停产单 FET,MOSFET

MOSFET N-CH 200V 35A ISOPLUS220

沟道N 沟道
耐压200 V
连续漏极电流35 A
导通电阻36 mΩ

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流35 A
导通电阻36 mΩ最大 · 37A
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)120W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageBox
Package / CaseISOPLUS220™
Supplier Device PackageISOPLUS220™
其他
Base Product NumberIXFC74N20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs36mOhm @ 37A, 10V
SeriesPolarHT™ HiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

器件图片

技术资料