IXYSUnited States
MOSFET N-CH 150V 42A ISOPLUS220
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current42 A
On-resistance26 mΩMax · 48A
Gate threshold voltage5 VMax · 4mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Box |
| Package / Case | ISOPLUS220™ |
| Supplier Device Package | ISOPLUS220™ |
| Other | |
| Base Product Number | IXFC96N15 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 48A, 10V |
| Series | PolarHT™ HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |