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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current40 A
On-resistance85 mΩMax · 500mA
Gate threshold voltage4 VMax · 4mA
Power
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXFH)
Other
Base Product NumberIXFH40
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs85mOhm @ 500mA, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 4mA

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