All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current94 A
On-resistance36 mΩMax · 47A
Gate threshold voltage5 VMax · 4mA
Power
Current - Continuous Drain (Id) @ 25°C94A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)890W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXFH)
Other
Base Product NumberIXFH94
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11400 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs36mOhm @ 47A, 10V
SeriesHiPerFET™, Trench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

Documents

No documents are linked to this part yet.