IXYS美国

IXFK102N30P

在产单 FET,MOSFETTO-264AA

MOSFET N-CH 300V 102A TO264AA

沟道N 沟道
耐压300 V
连续漏极电流102 A
导通电阻33 mΩ

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技术参数

沟道N 沟道
耐压300 V
连续漏极电流102 A
导通电阻33 mΩ最大 · 500mA
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)700W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA (IXFK)
其他
Base Product NumberIXFK102
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs33mOhm @ 500mA, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

技术资料