IXYS美国

IXFK230N20T

在产单 FET,MOSFETTO-264AA

MOSFET N-CH 200V 230A TO264AA

沟道N 沟道
耐压200 V
连续漏极电流230 A
导通电阻7.5 mΩ

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技术参数

沟道N 沟道
耐压200 V
连续漏极电流230 A
导通电阻7.5 mΩ最大 · 60A
阈值电压5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C230A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1670W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA (IXFK)
其他
Base Product NumberIXFK230
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds28000 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs7.5mOhm @ 60A, 10V
SeriesHiPerFET™, Trench
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 8mA

技术资料