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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current44 A
On-resistance120 mΩMax · 22A
Gate threshold voltage4 VMax · 8mA
Power
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)500W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA (IXFK)
Other
Base Product NumberIXFK44
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs120mOhm @ 22A, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 8mA

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