IXYSUnited States

IXFL40N110P

ObsoleteSingle FETs, MOSFETsTO-264-3

MOSFET N-CH 1100V 21A ISOPLUS264

See alternativesAsk AI FAE

All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage1.1 kV
Continuous drain current21 A
On-resistance280 mΩMax · 20A
Gate threshold voltage6.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drain to Source Voltage (Vdss)1100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageISOPLUS264™
Other
Base Product NumberIXFL40
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds19000 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs280mOhm @ 20A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id6.5V @ 1mA

Documents

No documents are linked to this part yet.