IXYSUnited States

IXFM42N20

ObsoleteSingle FETs, MOSFETsTO-204AE

MOSFET N-CH 200V 42A TO204AE

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current42 A
On-resistance60 mΩMax · 21A
Gate threshold voltage4 VMax · 4mA
Power
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-204AE
Supplier Device PackageTO-204AE
Other
Base Product NumberIXFM42
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs60mOhm @ 21A, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 4mA

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