IXFN100N10S3
IXYS美国

IXFN100N10S3

停产单 FET,MOSFETSOT-227B

MOSFET N-CH 100V 100A SOT-227B

沟道N 沟道
耐压100 V
连续漏极电流100 A
导通电阻15 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压100 V
连续漏极电流100 A
导通电阻15 mΩ最大 · 500mA
阈值电压4 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)360W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXFN100
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs15mOhm @ 500mA, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 4mA

器件图片

技术资料