IXFN130N30
IXYS美国

IXFN130N30

不推荐用于新设计单 FET,MOSFETSOT-227B

MOSFET N-CH 300V 130A SOT-227B

沟道N 沟道
耐压300 V
连续漏极电流130 A
导通电阻22 mΩ

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技术参数

沟道N 沟道
耐压300 V
连续漏极电流130 A
导通电阻22 mΩ最大 · 500mA
阈值电压4 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)700W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXFN130
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14500 pF @ 25 V
MfrIXYS
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs22mOhm @ 500mA, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 8mA

器件图片

技术资料