IXFN32N80P
IXYS美国

IXFN32N80P

在产单 FET,MOSFETSOT-227B

MOSFET N-CH 800V 29A SOT-227B

沟道N 沟道
耐压800 V
连续漏极电流29 A
导通电阻270 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压800 V
连续漏极电流29 A
导通电阻270 mΩ最大 · 16A
阈值电压5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)625W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXFN32
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8820 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs270mOhm @ 16A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 8mA

器件图片

技术资料