IXFN34N100
IXYS美国

IXFN34N100

停产单 FET,MOSFETSOT-227B

MOSFET N-CH 1000V 34A SOT-227B

沟道N 沟道
耐压1 kV
连续漏极电流34 A
导通电阻280 mΩ

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技术参数

沟道N 沟道
耐压1 kV
连续漏极电流34 A
导通电阻280 mΩ最大 · 500mA
阈值电压5.5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)700W (Tc)
环境与封装
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B
其他
Base Product NumberIXFN34
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9200 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs280mOhm @ 500mA, 10V
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5.5V @ 8mA

器件图片

技术资料