IXYSUnited States
SICFET N-CH 1200V 47A SOT227B
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current47 A
On-resistance50 mΩMax · 40A
Gate threshold voltage2.4 VMax · 10mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Other | |
| Base Product Number | IXFN50 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 1000 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Series | - |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 2.4V @ 10mA |