IXYSUnited States
MOSFET N-CH 850V 65A SOT227B
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage850 V
Continuous drain current65 A
On-resistance65 mΩMax · 33A
Gate threshold voltage5.5 VMax · 8mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drain to Source Voltage (Vdss) | 850 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 830W (Tc) |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Other | |
| Base Product Number | IXFN66 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 33A, 10V |
| Series | HiPerFET™, Ultra X |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |