IXYSUnited States
MOSFET N-CH 1000V 4A TO220AB
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1 kV
Continuous drain current4 A
On-resistance3 ΩMax · 2A
Gate threshold voltage5 VMax · 1.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
| Other | |
| Base Product Number | IXFP4N100 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| Series | HiPerFET™, Q Class |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
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