IXYS美国

IXFP60N25X3M

在产单 FET,MOSFETTO-220AB

MOSFET N-CH 250V 60A TO220AB

沟道N 沟道
耐压250 V
连续漏极电流60 A
导通电阻23 mΩ

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技术参数

沟道N 沟道
耐压250 V
连续漏极电流60 A
导通电阻23 mΩ最大 · 30A
阈值电压4.5 V最大 · 1.5mA
电源
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)36W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB (IXFP)
其他
Base Product NumberIXFP60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3610 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
SeriesHiPerFET™, Ultra X3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1.5mA

技术资料