IXFP7N60P3
IXYS美国

IXFP7N60P3

停产单 FET,MOSFETTO-220-3

MOSFET N-CH 600V 7A TO220AB

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻1.15 Ω

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻1.15 Ω最大 · 500mA
阈值电压5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)180W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberIXFP7N60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.15Ohm @ 500mA, 10V
SeriesHiPerFET™, Polar3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

器件图片

技术资料