IXYSUnited States
MOSFET N-CH 800V 10A TO3P
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage800 V
Continuous drain current10 A
On-resistance1.1 ΩMax · 5A
Gate threshold voltage5.5 VMax · 2.5mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Other | |
| Base Product Number | IXFQ10 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
| Series | HiPerFET™, Polar |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |