IXFQ50N60P3
IXYS美国

IXFQ50N60P3

在产单 FET,MOSFETTO-3P

MOSFET N-CH 600V 50A TO3P

沟道N 沟道
耐压600 V
连续漏极电流50 A
导通电阻145 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流50 A
导通电阻145 mΩ最大 · 500mA
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1040W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
其他
Base Product NumberIXFQ50
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6300 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs145mOhm @ 500mA, 10V
SeriesHiPerFET™, Polar3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 4mA

器件图片

技术资料