IXYS美国

IXFR64N50P

在产单 FET,MOSFETTO-247-3

MOSFET N-CH 500V 35A ISOPLUS247

沟道N 沟道
耐压500 V
连续漏极电流35 A
导通电阻95 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流35 A
导通电阻95 mΩ最大 · 32A
阈值电压5.5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageISOPLUS247™
其他
Base Product NumberIXFR64
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8700 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs95mOhm @ 32A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 8mA

技术资料