IXYSUnited States
MOSFET N-CH 800V 23A TO268
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage800 V
Continuous drain current23 A
On-resistance420 mΩMax · 500mA
Gate threshold voltage4.5 VMax · 3mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 500W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Box |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268AA |
| Other | |
| Base Product Number | IXFT23 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 500mA, 10V |
| Series | HiPerFET™, Q Class |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Documents
No documents are linked to this part yet.