IXYS美国

IXFT36N60P

在产单 FET,MOSFETTO-268AA

MOSFET N-CH 600V 36A TO268

沟道N 沟道
耐压600 V
连续漏极电流36 A
导通电阻190 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流36 A
导通电阻190 mΩ最大 · 18A
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)650W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA
其他
Base Product NumberIXFT36
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 18A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 4mA

技术资料