IXYSUnited States
MOSFET N-CH 200V 58A TO268
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current58 A
On-resistance40 mΩMax · 29A
Gate threshold voltage4 VMax · 4mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package | TO-268AA |
| Other | |
| Base Product Number | IXFT58 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| Mfr | IXYS |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 29A, 10V |
| Series | HiPerFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
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