IXYS美国

IXFT69N30P

在产单 FET,MOSFETTO-268AA

MOSFET N-CH 300V 69A TO268

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沟道N 沟道
耐压300 V
连续漏极电流69 A
导通电阻49 mΩ

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技术参数

沟道N 沟道
耐压300 V
连续漏极电流69 A
导通电阻49 mΩ最大 · 500mA
阈值电压5 V最大 · 4mA
电源
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)500W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA
其他
Base Product NumberIXFT69
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4960 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs49mOhm @ 500mA, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

技术资料

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