All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current74 A
On-resistance34 mΩMax · 37A
Gate threshold voltage5 VMax · 4mA
Power
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)480W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageBox
Package / CasePLUS-220SMD
Supplier Device PackagePLUS-220SMD
Other
Base Product NumberIXFV74
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs34mOhm @ 37A, 10V
SeriesPolarHT™ HiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

Documents