All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current140 A
On-resistance24 mΩMax · 70A
Gate threshold voltage5 VMax · 8mA
Power
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)1040W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3
Other
Base Product NumberIXFX140
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 25 V
MfrIXYS
Product StatusActive
Rds On (Max) @ Id, Vgs24mOhm @ 70A, 10V
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 8mA

Documents