IXFX55N50F
IXYS美国

IXFX55N50F

停产单 FET,MOSFETTO-247-3 Variant

MOSFET N-CH 500V 55A PLUS247-3

沟道N 沟道
耐压500 V
连续漏极电流55 A
导通电阻85 mΩ

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流55 A
导通电阻85 mΩ最大 · 27.5A
阈值电压5.5 V最大 · 8mA
电源
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)560W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3
其他
Base Product NumberIXFX55
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6700 pF @ 25 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs85mOhm @ 27.5A, 10V
SeriesHiPerRF™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5.5V @ 8mA

器件图片

技术资料