IXYSUnited States
MOSFET N-CH 600V 23A ISOPLUS220
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current23 A
On-resistance100 mΩMax · 18A
Gate threshold voltage3.9 VMax · 1.2mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | ISOPLUS220™ |
| Supplier Device Package | ISOPLUS220™ |
| Other | |
| Base Product Number | IXKC23 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
| Mfr | IXYS |
| Product Status | Last Time Buy |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 18A, 10V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |