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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current24 A
On-resistance165 mΩMax · 12A
Gate threshold voltage3.5 VMax · 790μA
Power
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD
Other
Base Product NumberIXKH24
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 100 V
MfrIXYS
Product StatusObsolete
Rds On (Max) @ Id, Vgs165mOhm @ 12A, 10V
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 790µA

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